Quantitative simulation of a resonant tunneling diode

نویسندگان

  • R. Chris Bowen
  • Gerhard Klimeck
  • Roger K. Lake
  • William R. Frensley
  • Ted Moise
  • Eric Jonsson
چکیده

Related Articles Ultra-thin titanium oxide Appl. Phys. Lett. 101, 083113 (2012) Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices Appl. Phys. Lett. 101, 043508 (2012) Simulation of trap-assisted tunneling effect on characteristics of gallium nitride diodes J. Appl. Phys. 111, 123115 (2012) Tuning of terahertz intrinsic oscillations in asymmetric triple-barrier resonant tunneling diodes J. Appl. Phys. 111, 124310 (2012) Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates Appl. Phys. Lett. 100, 252105 (2012)

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A Third Order Harmonic Oscillator Based on Coupled Resonant Tunneling Diode Pair Oscillators

A third order harmonic oscillator has been proposed based on the resonant tunneling diode pair oscillators. This oscillator has significant advantages, good stability of the oscillation frequency against the load impedance change together with capability to output higher frequencies. Proper circuit operation has been demonstrated using circuit simulations. It has been also shown that the output...

متن کامل

Quantitative analysis of the trapping effect on terahertz AlGaN/GaN resonant tunneling diode

We report on a simulation for terahertz aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature by introducing deep-level defects into the polarized AlGaN/GaN/AlGaN quantum well. Results show that an evident degradation in negative-differential-resistance characteristic of RTD occurs when the defect density is higher than 10 cm , which is consis...

متن کامل

Role of interface roughness scattering in self-consistent resonant-tunneling-diode simulations

The effects of interface roughness scattering in a resonant-tunneling diode are examined with the selfconsistent Born and the multiple sequential scattering algorithm for various interface roughness correlation lengths. The effect of a self-consistent treatment of the scattering self-energies with the quantum charge and the electrostatic and exchange-correlation potentials is demonstrated. The ...

متن کامل

Modeling of light-sensitive resonant-tunneling-diode devices

We present a method to include the effects of light excitation on two different models of resonant-tunneling-diode-based devices. Our approach takes into account both photoconductive and charge accumulation effects responsible for shifting the static I – V curve when the structure is under light excitation. Computational simulations led to good agreement between the model and experimental resul...

متن کامل

A Proposal of High-Performance Samplers Based on Resonant Tunneling Diodes

A novel type of millimeter/submillimeter wave sampler based on resonant tunneling diodes (RTDs) was proposed, and its operation was confirmed by circuit simulation. It consists of an RTD pulse generator and an RTD detector. Owing to the fuse-like nonlinear I-V curve, highly sensitive sampling can be obtained. We also found that the effects of nonideality in the I-V curve of the RTD can be corre...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2012